The ME3981 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
應用:
●筆記本中的電源管理
●便攜式設備
●電池供電系統
●DC/DC轉換器
●負荷開關
●差示掃描量熱儀
●液晶顯示逆變器
● RDS(ON)≦62mΩ@VGS=-4.5V
● RDS(ON)≦80mΩ@VGS=-2.5V
● RDS(ON)≦115mΩ@VGS=-1.8V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability