The ME4425 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
ME4425是P通道邏輯增強(qiáng)型功率場(chǎng)效應(yīng)晶體管,采用高單元密度,DMOS溝道技術(shù)。這種高密度工藝特別適合于最小化導(dǎo)通電阻。這些設(shè)備特別適合于低電壓應(yīng)用,如和筆記本電腦電源管理和其他電池供電電路,在非常小的范圍內(nèi)需要高側(cè)切換和低串聯(lián)功耗外形表面安裝包。
● RDS(ON)≦14mΩ@VGS=-10V
● RDS(ON)≦19mΩ@VGS=-4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
應(yīng)用:
●筆記本中的電源管理
●便攜式設(shè)備
●電池供電系統(tǒng)
●DC/DC轉(zhuǎn)換器
●負(fù)荷開關(guān)
●差示掃描量熱儀
●液晶顯示逆變器