The ME4416 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.

ME4416是N通道邏輯增強型功率場效應晶體管，采用高單元密度DMOS溝道技術制造。

這種高密度工藝特別適合于最小化導通電阻。

這些設備特別適用于低電壓應用，如蜂窩電話和筆記本電腦電源管理和其他電池供電電路，在非常小的外形表面貼裝封裝中，需要高側開關和低功耗。