The ME4417 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and other battery powered circuits in a very small outline surface mount package.
ME4417是P通道邏輯增強型功率場效應晶體管,采用高密度DMOS溝道技術制造。這種高密度工藝特別適合于將導通電阻降到。這些器件特別適用于低電壓應用,如手機和其他電池供電電路一個非常小的外形表面安裝包。
● RDS(ON)≦8.6mΩ@VGS=-20V
● RDS(ON)≦9.6mΩ@VGS=-10V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
應用:
●筆記本中的電源管理
●電池供電系統
●DC/DC轉換器低壓側開關
●負荷開關