The ME4412 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

ME4412是N通道邏輯增強型功率場效應晶體管，采用高密度DMOS溝道技術制造。這種高密度工藝特別適合于最小化導通電阻。這些設備特別適用于低電壓應用，如蜂窩電話和筆記本電腦電源管理和其他電池供電電路，在非常小的外形表面安裝包中，需要高側切換和低功耗。