The ME4410A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
ME4410A是采用高密度DMOS溝道技術制作的N通道邏輯增強型功率場效應晶體管。這種高密度工藝特別適合于最小化導通電阻。這些設備特別適用于低電壓應用，如蜂窩電話和筆記本電腦電源管理和其他電池供電電路，在非常小的外形表面貼裝封裝中，需要高側開關和低壓功耗。
● RDS(ON)=14mΩ@VGS=10V
● RDS(ON)=22mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability
應用：
●筆記本中的電源管理
●便攜式設備
●電池供電系統
●DC/DC轉換器
●負荷開關
●差示掃描量熱儀
